Abstract: Because of trapped charges in GaN transistor structure, device dynamic on-state resistance $R_\mathrm{DSon}$ is increased when it is operated in high ...
Correspondence to Eric J Thomas, University of Texas at Houston, Memorial Hermann Center for Healthcare Quality and Safety, 6410 Fannin, UPB 1100.45, Houston, TX 77030, USA; eric.thomas{at}uth.tmc.edu ...
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